Abstract

In this study, we developed a continuum theory of the charge transport in dielectrics by trapped electrons and holes, which takes into account two separate contributions of the current of trapped charge carriers: the drift part and the diffusion one. It was shown that drift current is mostly dominant in the bulk, while the diffusion one reaches significant values near contacts. A comparison with other theoretical models and experiments shows a good agreement. The model can be extended to two- and three-dimensional systems. The developed model, formulated in partial differential equations, can be numerically implemented in the finite element method code.

Original languageEnglish
Article number15759
Number of pages10
JournalScientific Reports
Volume10
Issue number1
DOIs
Publication statusPublished - 1 Dec 2020

Keywords

  • ELECTRICAL-CONDUCTIVITY
  • NONVOLATILE MEMORY
  • CONSTANT
  • EMISSION
  • MODEL

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