Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures

P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, I. V. Osinnykh, N. V. Fateev

Research output: Contribution to journalArticlepeer-review

Abstract

The spectral characteristics of spontaneous and stimulated luminescence of heavily silicon-doped Al (x) Ga1 - x N structures with the concentration n (Si) > 1020 cm(-3) are studied with pulsed optical pumping at lambda = 266 nm. The resulting dominant broadband radiation with a full width at half maximum of similar to 150 nm covers the whole visible spectral region. The radiation spectrum from the end of the structure is split into narrow components determined by the mode structure of the planar waveguide formed. The results indicate the stimulated character of the radiation. The optical gain for different structures fall in the range 20-70 cm(-1).

Original languageEnglish
Pages (from-to)405-409
Number of pages5
JournalAtmospheric and Oceanic Optics
Volume31
Issue number4
DOIs
Publication statusPublished - 1 Jul 2018

Keywords

  • AlGaN structures
  • luminescence
  • optical gain
  • AlxGa1-xN structures
  • MOLECULAR-BEAM EPITAXY

Fingerprint Dive into the research topics of 'Broadband Spontaneous and Stimulated Luminescence of Heavily Doped Al<sub>x</sub>Ga<sub>1 – x</sub>N Structures'. Together they form a unique fingerprint.

Cite this