Bipolar conductivity in ferroelectric La:HfZrO films

Timofey V. Perevalov, Andrei A. Gismatulin, Vladimir A. Gritsenko, Igor' P. Prosvirin, Furqan Mehmood, Thomas Mikolajick, Uwe Schroeder

Research output: Contribution to journalArticlepeer-review

Abstract

Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures used in one-transistor-one capacitor nonvolatile memory cells for the development of new generation nonvolatile random-access memory. Here, different capacitor structures are characterized by x-ray photoelectron spectroscopy electrically to determine the electron and hole contribution to the conductivity in these capacitor structures. Experiments related to the minority carrier's injection and charge transport from an n-Si and a p-Si substrate into a lanthanum-doped HfZrO layer show that the conductivity is bipolar. Electrons are injected into La:HfZrO from a negatively biased contact, and accordingly, holes are injected from a positive voltage biased electrode.

Original languageEnglish
Article number262903
JournalApplied Physics Letters
Volume118
Issue number26
DOIs
Publication statusPublished - 28 Jun 2021

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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