Atomic Structure of Semiconductor Low-Dimensional Heterosystems

Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

Abstract

The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.

Original languageEnglish
Title of host publicationAdvances in Semiconductor Nanostructures
Subtitle of host publicationGrowth, Characterization, Properties and Applications
EditorsAV Latyshev, AV Dvurechenskii, AL Aseev
PublisherElsevier Science Inc.
Pages223-253
Number of pages31
ISBN (Electronic)9780128105139
ISBN (Print)9780128105122
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • Heterosystem
  • High-resolution electron microscopy
  • Low-dimensional semiconductor systems
  • Semiconductor
  • DISLOCATIONS
  • ORIGIN
  • HREM
  • MECHANISM
  • STRAIN

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