Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

V. V. Bakin, S. N. Kosolobov, S. A. Rozhkov, H. E. Scheibler, A. S. Terekhov

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.

Original languageEnglish
Pages (from-to)180-184
Number of pages5
JournalJETP Letters
Volume108
Issue number3
DOIs
Publication statusPublished - 1 Aug 2018

Keywords

  • NEGATIVE ELECTRON-AFFINITY
  • P-GAN(0001) SURFACES
  • GAAS-CS
  • PHOTOELECTRONS
  • PHOTOCATHODE
  • ADSORPTION
  • STATES

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