Atomic Force Microscopy Local Oxidation of GeO Thin Films

K. N. Astankova, A. S. Kozhukhov, E. B. Gorokhov, I. A. Azarov, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

Abstract

Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

Original languageEnglish
Pages (from-to)2081-2084
Number of pages4
JournalSemiconductors
Volume52
Issue number16
DOIs
Publication statusPublished - 1 Dec 2018

Keywords

  • NANO-OXIDATION
  • HUMIDITY

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