Anisotropy of optical phonons in biaxially stressed zinc-blende- and diamond-type semiconductors and alloys

V. A. Volodin; V. A. Sachkov

doi:10.1016/j.physb.2021.413008

Anisotropy of optical phonons in biaxially stressed zinc-blende- and diamond-type semiconductors and alloys

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Abstract

The splitting of long-wave optical phonons that arises in biaxially stressed zinc-blende- and diamond-type crystals due to violation of cubic symmetry in such crystals was studied both theoretically and experimentally (using micro-Raman technique). The anglular dispersion of optical phonons near the center of the Brillouin zone was calculated for split modes in biaxially stressed (001)-oriented films. The results obtained were used to analyze the effects due to strain and alloying on optical-phonon frequencies in stressed Ge, InGaAs and InAlAs films grown on GaAs (001) substrates. The developed approach permits a more precise determination of both the composition and the biaxial strain in AIIIBV alloy films based on an analysis of Raman spectra taken from such films.

Original language	English
Article number	413008
Journal	Physica B: Condensed Matter
Volume	614
DOIs	https://doi.org/10.1016/j.physb.2021.413008
Publication status	Published - 1 Aug 2021

Keywords

63.20.-e 78.30.-j
Phonons
Raman scattering
Solid alloys
Strain

OECD FOS+WOS

2.02 ELECTRICAL ENG, ELECTRONIC ENG
2.05 MATERIALS ENGINEERING
1.03.UK PHYSICS, CONDENSED MATTER

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10.1016/j.physb.2021.413008

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title = "Anisotropy of optical phonons in biaxially stressed zinc-blende- and diamond-type semiconductors and alloys",

abstract = "The splitting of long-wave optical phonons that arises in biaxially stressed zinc-blende- and diamond-type crystals due to violation of cubic symmetry in such crystals was studied both theoretically and experimentally (using micro-Raman technique). The anglular dispersion of optical phonons near the center of the Brillouin zone was calculated for split modes in biaxially stressed (001)-oriented films. The results obtained were used to analyze the effects due to strain and alloying on optical-phonon frequencies in stressed Ge, InGaAs and InAlAs films grown on GaAs (001) substrates. The developed approach permits a more precise determination of both the composition and the biaxial strain in AIIIBV alloy films based on an analysis of Raman spectra taken from such films.",

keywords = "63.20.-e 78.30.-j, Phonons, Raman scattering, Solid alloys, Strain",

author = "Volodin, {V. A.} and Sachkov, {V. A.}",

note = "Funding Information: The author is grateful to Dr. A. I. Toropov and Dr. A. I. Sokolov for provided MBE grown structures. The work was carried out according to the state research program of ISP SB RAS (experiments) and within the governmental order for Omsk Scientific Center SB RAS (project registration number 121021600004?7) (modeling and calculations). Publisher Copyright: {\textcopyright} 2021 Elsevier B.V. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

year = "2021",

month = aug,

day = "1",

doi = "10.1016/j.physb.2021.413008",

language = "English",

volume = "614",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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T1 - Anisotropy of optical phonons in biaxially stressed zinc-blende- and diamond-type semiconductors and alloys

AU - Volodin, V. A.

AU - Sachkov, V. A.

N1 - Funding Information: The author is grateful to Dr. A. I. Toropov and Dr. A. I. Sokolov for provided MBE grown structures. The work was carried out according to the state research program of ISP SB RAS (experiments) and within the governmental order for Omsk Scientific Center SB RAS (project registration number 121021600004?7) (modeling and calculations). Publisher Copyright: © 2021 Elsevier B.V. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/8/1

Y1 - 2021/8/1

N2 - The splitting of long-wave optical phonons that arises in biaxially stressed zinc-blende- and diamond-type crystals due to violation of cubic symmetry in such crystals was studied both theoretically and experimentally (using micro-Raman technique). The anglular dispersion of optical phonons near the center of the Brillouin zone was calculated for split modes in biaxially stressed (001)-oriented films. The results obtained were used to analyze the effects due to strain and alloying on optical-phonon frequencies in stressed Ge, InGaAs and InAlAs films grown on GaAs (001) substrates. The developed approach permits a more precise determination of both the composition and the biaxial strain in AIIIBV alloy films based on an analysis of Raman spectra taken from such films.

AB - The splitting of long-wave optical phonons that arises in biaxially stressed zinc-blende- and diamond-type crystals due to violation of cubic symmetry in such crystals was studied both theoretically and experimentally (using micro-Raman technique). The anglular dispersion of optical phonons near the center of the Brillouin zone was calculated for split modes in biaxially stressed (001)-oriented films. The results obtained were used to analyze the effects due to strain and alloying on optical-phonon frequencies in stressed Ge, InGaAs and InAlAs films grown on GaAs (001) substrates. The developed approach permits a more precise determination of both the composition and the biaxial strain in AIIIBV alloy films based on an analysis of Raman spectra taken from such films.

KW - 63.20.-e 78.30.-j

KW - Phonons

KW - Raman scattering

KW - Solid alloys

KW - Strain

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DO - 10.1016/j.physb.2021.413008

M3 - Article

AN - SCOPUS:85103796434

VL - 614

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

M1 - 413008

ER -

Anisotropy of optical phonons in biaxially stressed zinc-blende- and diamond-type semiconductors and alloys

Abstract

Keywords

OECD FOS+WOS

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