The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 15 Apr 2021|
|Event||22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020 - St. Petersburg, Russian Federation|
Duration: 23 Nov 2020 → 27 Nov 2020
- 1.03 PHYSICAL SCIENCES AND ASTRONOMY