Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu G. Galitsyn, K. S. Zhuravlev

Research output: Contribution to journalConference articlepeer-review

Abstract

The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition.

Original languageEnglish
Article number012005
JournalJournal of Physics: Conference Series
Volume1851
Issue number1
DOIs
Publication statusPublished - 15 Apr 2021
Event22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020 - St. Petersburg, Russian Federation
Duration: 23 Nov 202027 Nov 2020

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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