Aluminum-induced crystallization of silicon suboxide thin films

A. O. Zamchiy, E. A. Baranov, S. Ya Khmel, V. A. Volodin, V. I. Vdovin, A. K. Gutakovskii

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Polycrystalline silicon (poly-Si) thin films are fabricated by aluminum-induced crystallization (AIC) of amorphous silicon suboxide (a-SiOx, x = 0.22) at 550 °C for 20 h. AIC of a-SiO0.22 via thermal annealing of a-SiO0.22/Al bilayer structures leads to layer exchange with the formation of poly-Si films with (111) preferential orientation and high-crystalline quality-coated with a layer of a mixture of Al, Si, and O atoms with inclusions of silicon nanocrystallites. The initial a-SiO0.22/Al thickness ratio approximately equal to 1 provides the formation of a discontinuous poly-Si film with a crystallized fraction of 85%, as shown by optical microscopy.

Original languageEnglish
Article number646
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume124
Issue number9
DOIs
Publication statusPublished - 1 Sep 2018

Keywords

  • AL-INDUCED CRYSTALLIZATION
  • VAPOR-DEPOSITION METHOD
  • INDUCED LAYER EXCHANGE
  • POLYCRYSTALLINE SILICON
  • SI FILMS
  • ORIENTATION
  • MORPHOLOGY
  • GLASS

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