AlSb/InAs Heterostructures for Microwave Transistors

M. A. Sukhanov; A. K. Bakarov; K. S. Zhuravlev

doi:10.1134/S1063785021020127

AlSb/InAs Heterostructures for Microwave Transistors

M. A. Sukhanov, A. K. Bakarov, K. S. Zhuravlev

Research output: Contribution to journal › Article › peer-review

Abstract

Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

Original language	English
Pages (from-to)	139-142
Number of pages	4
Journal	Technical Physics Letters
Volume	47
Issue number	2
DOIs	https://doi.org/10.1134/S1063785021020127
Publication status	Published - Feb 2021

Keywords

AlSb/InAs heterostructures
high electron mobility transistor
molecular beam epitaxy

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY
1.03.UB PHYSICS, APPLIED

Access to Document

10.1134/S1063785021020127

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title = "AlSb/InAs Heterostructures for Microwave Transistors",

abstract = "Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.",

keywords = "AlSb/InAs heterostructures, high electron mobility transistor, molecular beam epitaxy",

author = "Sukhanov, {M. A.} and Bakarov, {A. K.} and Zhuravlev, {K. S.}",

note = "Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

year = "2021",

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doi = "10.1134/S1063785021020127",

language = "English",

volume = "47",

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AU - Sukhanov, M. A.

AU - Bakarov, A. K.

AU - Zhuravlev, K. S.

N1 - Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2021, Pleiades Publishing, Ltd. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/2

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N2 - Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

AB - Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

KW - AlSb/InAs heterostructures

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KW - molecular beam epitaxy

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