Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.
- AlSb/InAs heterostructures
- high electron mobility transistor
- molecular beam epitaxy
- 1.03 PHYSICAL SCIENCES AND ASTRONOMY
- 1.03.UB PHYSICS, APPLIED