Abstract
Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.
Original language | English |
---|---|
Pages (from-to) | 139-142 |
Number of pages | 4 |
Journal | Technical Physics Letters |
Volume | 47 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2021 |
Keywords
- AlSb/InAs heterostructures
- high electron mobility transistor
- molecular beam epitaxy
OECD FOS+WOS
- 1.03 PHYSICAL SCIENCES AND ASTRONOMY
- 1.03.UB PHYSICS, APPLIED