AlSb/InAs Heterostructures for Microwave Transistors

M. A. Sukhanov, A. K. Bakarov, K. S. Zhuravlev

Research output: Contribution to journalArticlepeer-review

Abstract

Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transistors based on the AlSb/InAs heterostructures are outlined. The drain and drain–gate characteristics of the transistors are reported and discussed.

Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalTechnical Physics Letters
Volume47
Issue number2
DOIs
Publication statusPublished - Feb 2021

Keywords

  • AlSb/InAs heterostructures
  • high electron mobility transistor
  • molecular beam epitaxy

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY
  • 1.03.UB PHYSICS, APPLIED

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