AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

M. A. Sukhanov, A. K. Bakarov, D. Yu Protasov, K. S. Zhuravlev

Research output: Contribution to journalArticlepeer-review

Abstract

A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

Original languageEnglish
Pages (from-to)154-157
Number of pages4
JournalTechnical Physics Letters
Volume46
Issue number2
DOIs
Publication statusPublished - 1 Feb 2020

Keywords

  • dark current
  • InSb
  • IR photodetector
  • molecular-beam epitaxy
  • nBn detector

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