Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

S. V. Sitnikov, A. V. Latyshev, S. S. Kosolobov

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si(111) surface with extremely wide (up to 120 μm in size) terraces we have estimated the activation energy associated with the surface-bulk vacancy exchange processes. We show that atomic steps motion and negative islands nucleation kinetics at temperatures above 1180 °C can be described by the step-flow model of Burton, Cabrera and Frank taking into account advacancies formation. By comparing experimental results with predictions of model we conclude that the surface mass transport at temperatures above 1180 °C is governed by surface vacancies nucleation and interaction with atomic steps rather than via adatoms surface diffusion.

Original languageEnglish
Pages (from-to)196-201
Number of pages6
JournalJournal of Crystal Growth
Volume457
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • A1. Diffusion
  • A1. Mass transfer
  • A1. Surface processes
  • B2. Semiconducting silicon
  • VICINAL SURFACES
  • SILICON
  • SUBLIMATION
  • REFLECTION ELECTRON-MICROSCOPY
  • Mass transfer
  • TEMPERATURE
  • PHASE-TRANSITION
  • GROWTH
  • Semiconducting silicon
  • SCANNING-TUNNELING-MICROSCOPY
  • Surface processes
  • Diffusion
  • IN-SITU
  • TRANSFORMATIONS

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