Activation energy of gold-induced crystallization of amorphous silicon suboxide films

A. O. Zamchiy, E. A. Baranov, V. O. Konstantinov, N. A. Lunev, S. Z. Sakhapov, I. V. Korolkov, V. A. Volodin

Research output: Contribution to journalArticlepeer-review

Abstract

Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.

Original languageEnglish
Article number132566
JournalMaterials Letters
Volume323
DOIs
Publication statusPublished - 15 Sep 2022

Keywords

  • Activation energy
  • Gold-induced crystallization
  • Polycrystalline silicon
  • Silicon suboxide
  • Thin films

OECD FOS+WOS

  • 2.05 MATERIALS ENGINEERING
  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY
  • 2.03 MECHANICAL ENGINEERING

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