Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential

L. S. Bovkun, A. V. Ikonnikov, V. Ya Aleshkin, S. S. Krishtopenko, A. V. Antonov, K. E. Spirin, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko

Research output: Contribution to journalArticlepeer-review

Abstract

Shubnikov-de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) × 1011 cm–2 in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells.

Original languageEnglish
Pages (from-to)1562-1570
Number of pages9
JournalSemiconductors
Volume51
Issue number12
DOIs
Publication statusPublished - 1 Dec 2017

Keywords

  • DE-HAAS OSCILLATIONS
  • DENSITY-OF-STATES
  • ELECTRON G-FACTOR
  • EXCHANGE ENHANCEMENT
  • TRANSPORT
  • GAS
  • HETEROSTRUCTURES
  • SCATTERING
  • SYSTEM

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