A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu Esin, T. A. Gavrilova, M. A. Putyato, N. L. Schwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii

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Abstract

GaAs nanowires (NWs) were generated on the surface of GaAs(111)B and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 107 and 3 × 107 cm–2 for (111)B and (100), respectively.

Original languageEnglish
Pages (from-to)161-164
Number of pages4
JournalTechnical Physics Letters
Volume46
Issue number2
DOIs
Publication statusPublished - 1 Feb 2020

Keywords

  • atomic force microscopy
  • ellipsometry
  • molecular beam epitaxy
  • nanowires
  • scanning electronic microscopy
  • GAAS NANOWIRES

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