Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, I. V. Osinnykh, N. V. Fateev

Research output: Contribution to journalArticlepeer-review

Abstract

The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.

Translated title of the contributionОсобенности оптического усиления в сильнолегированных AlxGa1-xN:Si-структурах
Original languageEnglish
Pages (from-to)692-695
Number of pages4
JournalTechnical Physics Letters
Volume47
Issue number9
DOIs
Publication statusPublished - Sep 2021

Keywords

  • heavily doped AlGaN structures
  • luminescence
  • optical gain
  • stimulated emission

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

State classification of scientific and technological information

  • 29 PHYSICS

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