Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

P. A. Bokhan; K. S. Zhuravlev; D. E. Zakrevsky; T. V. Malin; I. V. Osinnykh; N. V. Fateev

doi:10.1134/S1063785021070178

Features of Optical Gain in Heavily Doped Al_xGa_{1 –}_xN:Si-Structures

P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, I. V. Osinnykh, N. V. Fateev

Research output: Contribution to journal › Article › peer-review

Abstract

The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al_0.65Ga_0.35N and Al_0.74Ga_0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.

Translated title of the contribution	Особенности оптического усиления в сильнолегированных AlxGa1-xN:Si-структурах
Original language	English
Pages (from-to)	692-695
Number of pages	4
Journal	Technical Physics Letters
Volume	47
Issue number	9
DOIs	https://doi.org/10.1134/S1063785021070178
Publication status	Published - Sep 2021

Keywords

heavily doped AlGaN structures
luminescence
optical gain
stimulated emission

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY

State classification of scientific and technological information

29 PHYSICS

Access to Document

10.1134/S1063785021070178

Cite this

@article{df460ebcb090423698ecda56fd47859e,

title = "Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures",

abstract = "The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.",

keywords = "heavily doped AlGaN structures, luminescence, optical gain, stimulated emission",

author = "Bokhan, {P. A.} and Zhuravlev, {K. S.} and Zakrevsky, {D. E.} and Malin, {T. V.} and Osinnykh, {I. V.} and Fateev, {N. V.}",

note = "This work was carried out within the framework of a state order to the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = sep,

doi = "10.1134/S1063785021070178",

language = "English",

volume = "47",

pages = "692--695",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "PLEIADES PUBLISHING INC",

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T1 - Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

AU - Bokhan, P. A.

AU - Zhuravlev, K. S.

AU - Zakrevsky, D. E.

AU - Malin, T. V.

AU - Osinnykh, I. V.

AU - Fateev, N. V.

N1 - This work was carried out within the framework of a state order to the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/9

Y1 - 2021/9

N2 - The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.

AB - The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.

KW - heavily doped AlGaN structures

KW - luminescence

KW - optical gain

KW - stimulated emission

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