Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase

I. E. Tyschenko, R. A. Khmelnitsky, V. V. Saraykin, V. A. Volodin, V. P. Popov

Research output: Contribution to journalArticlepeer-review

Abstract

Ge diffusivity from a buried SiO2 layer of a silicon-on-insulator (SOI) structure has been studied as a function of annealing temperature. It has been shown that, at an annealing temperature lower than 900°C, almost all Ge is localized in the implantation region of the SiO2 layer. As the annealing temperature is raised to 1100°C, migration of ion-implanted Ge is accompanied by several processes: diffusion into SiO2, accumulation at Si/SiO2 interfaces, diffusion into silicon, and evaporation from silicon. At 1100°C, Ge diffuses from SiO2 to the bonding interface of the SOI structure with the diffusion coefficient of ~2 × 10−15 cm2/s, which is 2 orders of magnitude higher than its equilibrium value. Depending on the thickness of the silicon layer, formation of a Ge or SiGe phase is detected after annealing at a temperature of 1100°C.

Translated title of the contributionДиффузия германия из захороненного слоя SiO2 и формирование фазы SiGe
Original languageEnglish
Pages (from-to)215-222
Number of pages8
JournalSemiconductors
Volume56
Issue number3
DOIs
Publication statusPublished - Mar 2022

Keywords

  • diffusion
  • ion implantation
  • SiGe
  • silicon-on-insulator

OECD FOS+WOS

  • 2.05 MATERIALS ENGINEERING
  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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