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Ekaterina Evgenevna Rodyakina

Candidate of Sciences

20172021

Research activity per year

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Network

Dietrich R.T. Zahn

  • Chemnitz University of Technology

External person

V. M. Dzhagan

  • Chemnitz University of Technology
  • Institute of Semiconductors Physics National Academy of Sciences in Ukraine
  • National Academy of Sciences in Ukraine
  • Kyiv National Taras Shevchenko University

External person

Zhanna V. Smagina

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Novosibirsk State University

External person

T. A. Duda

  • Novosibirsk State University
  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

Vladimir A. Zinovyev

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

Mahfujur Rahaman

  • Chemnitz University of Technology

External person

K. V. Anikin

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

S. V. Sitnikov

  • Siberian Branch of Russian Academy of Sciences
  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

M. V. Stepikhova

  • RAS - Institute of Applied Physics
  • Institute for Physics of Microstructures

External person

A. V. Novikov

  • RAS - Institute of Applied Physics
  • Alikhanov Institute for Theoretical and Experimental Physics
  • Moscow Engineering Physics Institute
  • National Research University Higher School of Economics
  • Institute for Physics of Microstructures
  • Nizhni Novgorod State University
  • Moscow Institute of Physics and Technology

External person

S. A. Rudin

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Novosibirsk State University

External person

O. A. Tkachenko

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

D. I. Rogilo

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

R. B. Vasiliev

  • Federak State Educational Institution of Higer Professional Education Lomonosov Moscow State University

External person

I. V. Marchishin

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

Sergey Vitkalov

  • Columbia University
  • City University of New York
  • Novosibirsk State University

External person

Dmitriy V. Sheglov

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Novosibirsk State University

External person

S. A. Gusev

  • Institute for Physics of Microstructures

External person

Olga Cherkasova

  • Novosibirsk State University
  • Institute of Laser Physics of the Siberian Branch of the RAS
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Novosibirsk State Technical University

External person

A. N. Yablonskiy

  • RAS - Institute of Applied Physics
  • Institute for Physics of Microstructures

External person

A. V. Goran

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

A. S. Yaroshevich

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

L. L. Sveshnikova

  • Novosibirsk State University
  • Irkutsk State University
  • Federak State Educational Institution of Higer Professional Education Lomonosov Moscow State University
  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

B. M. Saidzhonov

  • Federak State Educational Institution of Higer Professional Education Lomonosov Moscow State University

External person

A. V. Peretokin

  • Institute for Physics of Microstructures
  • R.Y. Alekseev Nizhny Novgorod State Technical University

External person

D. V. Nomokonov

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

Polina A. Kuchinskaya

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

B. I. Fomin

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

Sergey M. Sergeev

  • Institute for Physics of Microstructures

External person

V. A. Zinoviev

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Novosibirsk State University

External person

S. D. Ganichev

  • University of Regensburg

External person

Kirill Anikin

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Red Spectrometer LLC

External person

Sreetama Banerjee

  • Chemnitz University of Technology

External person

A. N. Karpov

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

M. V. Shaleev

  • Institute for Physics of Microstructures

External person

A. S. Jaroshevich

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

Dmitriy Nasimov

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Novosibirsk State University

External person

S. Abedi

  • City University of New York

External person

N. L. Shwartz

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Novosibirsk State Technical University

External person

S. M. Sergeev

  • RAS - Institute of Applied Physics
  • Institute for Physics of Microstructures

External person

Ashutosh Mukherjee

  • Chemnitz University of Technology

External person

S. A. Dyakov

  • Skolkovo Institute of Science and Technology

External person

M. Otteneder

  • University of Regensburg

External person

S. S. Kosolobov

  • Siberian Branch of Russian Academy of Sciences
  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS
  • Skolkovo Institute of Science and Technology
  • Novosibirsk State University

External person

N. S. Rudaya

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

I. S. Strygin

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

A. S. Terekhov

  • Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS

External person

Georgeta Salvan

  • Chemnitz University of Technology

External person

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